(b) The fundamental difference in transfer characteristics of a Fe-FET versus a NC-FET which has an anti-clockwise hysteresis or zero-hysteresis, respectively. (a) Schematic image of a NC-FET with ferroelectric and conventional dielectric as the gate stack. 4 The negative capacitance field-effect transistor (NC-FET) proposed by Salahuddin and Datta 5 is a recent entry to the list. As power consumption, self-heating and scaling considerations threaten the scaling of CMOS at the twilight of Moore's law, it is not surprising that researchers are once again looking for a more scalable and energy-efficient replacement, such as tunnel FETs, 1 nano-electro-mechanical-FETs, 2 spin-FETs, 3 phase-FETs. In the 1980s, bipolar transistors were replaced by an even more power efficient technology based on complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs). In the 1950s, when the vacuum tubes reached the power dissipation limits, the more power efficient bipolar transistors took over. The reinventions were catalyzed by the limits of power dissipation and self-heating for the corresponding device technologies. The remarkable progress of electronics in the 20th century sometimes obscures the dramatic story of repeated reinvention of the underlying device technology.
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